View TSM4N60CIC0G_2886643.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

tsm4n60 600v n-channel power mosfet 1/11 version: d10 to - 220 ito - 220 to - 251 (ipak) to - 252 (dpak) general description the tsm4n60 is produced using advanced planar strip e, dmos technology. this latest technology has been especially designed to minimize on-state resistance , have a high rugged avalanche characteristics. the re devices are well suited for high efficiency switch mode power supplies, active power factor correction , electronic lamp ballasts base on half bridge topology. features robust high voltage termination avalanche energy specified diode is characterized for use in bridge circuits source to drain diode recovery time comparable to a discrete fast recovery diode. ordering information part no. package packing tsm4n60cz c0 to-220 50pcs / tube tsm4n60cz c0g to-220 50pcs / tube tsm4n60ci c0 ito-220 50pcs / tube tsm4n60ci c0g ito-220 50pcs / tube tsm4n60ch c5 to-251 75pcs / tube tsm4n60ch c5g to-251 75pcs / tube tsm4n60cp ro to-252 2.5kpcs / 13 reel tsm4n60cp rog to-252 2.5kpcs / 13 reel note: g denotes for halogen free absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current i d 4 a pulsed drain current i dm 16 a single pulse drain to source avalanche energy (not e c) eas 120 mj avalanche current, repetitive or not-repetitive (n ote d) iar 10 mj peak diode recovery dv/dt (note e) dv/dt 4.5 v/ns total power dissipation @t c = 25 o c to-220 / to-251 / to-252 p tot 70 w ito-220 25 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c block diagram n-channel mosfet product summary v ds (v) r ds(on) ( ) i d (a) 600 2.5 @ v gs =10v 2 pin definition : 1. gate 2. drain 3. source
tsm4n60 600v n-channel power mosfet 2/11 version: d10 thermal performance parameter symbol limit unit thermal resistance junction to case to-220 / to-251 / to-252 r ? jc 1.78 o c/w ito-220 5 thermal resistance junction to ambient to-220 / ito-220 r ? ja 62.5 o c/w to-251 / to-252 100 notes: surface mounted on fr4 board t 10sec electrical specifications (ta=25 o c, unless otherwise noted) parameter conditions symbol min typ max unit off characteristics drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 600 -- -- v zero gate voltage drain current v ds = 600v, v gs = 0v i dss -- -- 10 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na on characteristics gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v drain-source on-state resistance v gs = 10v, i d = 2a r ds(on) -- 2 2.5 dynamic characteristics total gate charge v ds = 480v, i d = 4a, v gs = 10v q g -- 15 20 nc gate-source charge q gs -- 2.8 -- gate-drain charge q gd -- 6.2 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 545 710 pf output capacitance c oss -- 60 80 reverse transfer capacitance c rss -- 8 11 turn-on delay time v gs = 10v, i d = 4a, v dd = 300v, r g = 25 t d(on) -- 10 30 ns turn-on rise time t r -- 35 80 turn-off delay time t d(off) -- 45 100 turn-off fall time t f -- 40 90 source-drain diode ratings and characteristics continuous source current integral reverse p-n junction diode in the mosfet i s -- -- 4 a pulse source current i sm -- -- 16 diode forward voltage i s = 4a, v gs = 0v v sd -- -- 1.4 v reverse recovery time i s = 4a, v gs = 0v dl f /dt=100a/us t rr -- 300 -- ns reverse recovery charge q rr -- 2.2 -- uc notes: a. pulse test: pulse width <=300us, duty cycle <=2% b. essentially independent of operating temperature . c. v dd = 50v, i as =4a, l=27.5mh, r g =25 , starting t j = 25 o c d. pulse width limited by junction temperature e. i sd 4a, di/dt 200a/us, v dd b vdss ) starting t j =25oc
tsm4n60 600v n-channel power mosfet 3/11 version: d10 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm4n60 600v n-channel power mosfet 4/11 version: d10 diode reverse recovery time test circuit & waveform
tsm4n60 600v n-channel power mosfet 5/11 version: d10 electrical characteristics curve (ta = 25oc, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm4n60 600v n-channel power mosfet 6/11 version: d10 electrical characteristics curve (ta = 25 o c, unless otherwise noted) breakdown voltage vs. temperature threshold voltage vs. temperature maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm4n60 600v n-channel power mosfet 7/11 version: d10 to-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-220 dimension dim millimeters inches min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 i 8.382 9.017 0.330 0.355 j 14.224 16.510 0.560 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
tsm4n60 600v n-channel power mosfet 8/11 version: d10 ito-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code ito-220 dimension dim millimeters inches min max min max a 10.04 10.07 0.395 0.396 b 6.20 (typ.) 0.244 (typ.) c 2.20 (typ.) 0.087 (typ.) d 1.40 (typ.) 0.055 (typ.) e 15.0 15.20 0.591 0.598 f 0.52 0.54 0.020 0.021 g 2.35 2.73 0.093 0.107 h 13.50 13.55 0.531 0.533 i 1.11 1.49 0.044 0.058 j 2.60 2.80 0.102 0.110 k 4.49 4.50 0.176 0.177 l 1.15 (typ.) 0.045 (typ.) m 3.03 3.05 0.119 0.120 n 2.60 2.80 0.102 0.110 o 6.55 6.65 0.258 0.262
tsm4n60 600v n-channel power mosfet 9/11 version: d10 to-251 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = l ot code to-251 dimension dim millimeters inches min max min max a 2.10 2.50 0.083 0.098 b 0.65 1.05 0.026 0.041 b1 0.58 0.62 0.023 0.024 b2 4.80 5.20 0.189 0.205 b3 0.68 0.72 0.027 0.028 c 0.35 0.65 0.014 0.026 c1 0.40 0.60 0.016 0.024 d 5.30 5.70 0.209 0.224 e 6.30 6.70 0.248 0.264 e 2.30 bsc 0.09 bsc l 7.00 8.00 0.276 0.315 l1 1.40 1.80 0.055 0.071 l2 1.30 1.70 0.051 0.067 l3 0.50 0.90 0.020 0.035
tsm4n60 600v n-channel power mosfet 10/11 version: d10 to-252 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-252 dimension dim millimeters inches min max min max a 2.30 bsc 0.090 bsc b 10.20 10.80 0.402 0.425 c 5.30 5.70 0.209 0.224 d 6.30 6.70 0.248 0.264 e 2.10 2.50 0.083 0.098 f 0.00 0.20 0.000 0.008 g 4.80 5.20 0.189 0.205 g1 0.40 0.80 0.016 0.031 h 0.40 0.60 0.016 0.024 h1 0.35 0.65 0.014 0.026 j 3.35 3.65 0.132 0.144 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.067
tsm4n60 600v n-channel power mosfet 11/11 version: d10 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.

▲Up To Search▲

Price & Availability of TSM4N60CIC0G

	To Download TSM4N60CIC0G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .